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SPICE MODEL: MMBT3904T
Pb
Lead-free
MMBT3904T
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * *
Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906T) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2)
TOP VIEW BC E G H K M A C
SOT-523 Dim A B C D G H J K
L N
Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0
Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8
Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4
Mechanical Data
* * * * * * * * *
Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): 1N Ordering & Date Code Information, See Page 2 Weight: 0.002 grams (approximate)
J
B
D
L M N a
C
All Dimensions in mm
B E
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value 60 40 6.0 200 150 833 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
DS30270 Rev. 7 - 2
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MMBT3904T
a Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3)
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 3/4 3/4 40 70 100 60 30 3/4 0.65 3/4 3/4 3/4 1.0 0.5 100 1.0 300 3/4 Max 3/4 3/4 3/4 50 50 3/4 3/4 300 3/4 3/4 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 3/4 5.0 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
Cobo Cibo hie hre hfe hoe fT NF
pF pF kW x 10-4 3/4 mS MHz dB
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0Vdc, IC = 100mAdc, RS = 1.0KW, f = 1.0MHz
td tr ts tf
3/4 3/4 3/4 3/4
35 35 200 50
ns ns ns ns
VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA IB1 = IB2 = 1.0mA
Ordering Information (Note 4)
Device MMBT3904T-7-F
Notes:
Packaging SOT-523
Shipping 3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
1N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September)
1NYM
Date Code Key Year Code Month Code 2002 N 2003 P Jan 1 2004 R Feb 2 2005 S March 3 Apr 4 2006 T
2007 U May 5 Jun 6
2008 V Jul 7
2009 W Aug 8 Sep 9
2010 X Oct O
2011 Y Nov N
2012 Z Dec D
DS30270 Rev. 7 - 2
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MMBT3904T
250
CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
(see Note 1)
15
f = 1MHz
Pd, POWER DISSIPATION (mW)
200
10
150
100
5
Cibo
50
Cobo
0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve
1000
VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE
0 0.1
1
10
100
200
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage
1
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125C
100
TA = -25C
TA = +25C
0.1
10
VCE = 1.0V
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current
10
IC IB = 10
0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE
1
TA = -25C TA = 125C
TA = 25C
TA = 75C
0.1 0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current
DS30270 Rev. 7 - 2
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MMBT3904T
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30270 Rev. 7 - 2
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MMBT3904T

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